Avalanche spin-valve transistor
Publication information:
KJ Russell, Appelbaum, W. Yi, DJ Monsma, F. Capasso, CM Marcus, V. Narayanamurti, MP Hanson, and A. C. Gossard. 2004. “Avalanche Spin-Valve Transistor”. APPLIED PHYSICS LETTERS, 85, 19, Pp. 4502-4. doi:10.1063/1.1818339
Abstract
A spin-valve transistor with a GaAs/AlGaAs avalanche-multiplying collector is demonstrated with >1000% magnetocurrent variation and approximate to35x amplification of the collector current. The intrinsic amplification of the magnetic-field sensitive collector current should allow fabrication of spin-valve transistors with high gain in a variety of materials. (C) 2004 American Institute of Physics.