Point defect engineered Si sub-bandgap light-emitting diode
Publication information:
Jiming Bao, Malek Tabbal, Taegon Kim, Supakit Charnvanichborikarn, James S. Williams, Michael. J. Aziz, and Federico Capasso. 2007. “Point Defect Engineered Si Sub-Bandgap Light-Emitting Diode”. OPTICS EXPRESS, 15, 11, Pp. 6727-33. doi:10.1364/OE.15.006727
Abstract
We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line at 1218 nm originates. (C) 2007 Optical Society of America.