On the temperature dependence of point-defect-mediated luminescence in silicon

Citation:

Daniel Recht, Federico Capasso, and Michael J. Aziz. 2009. “On the temperature dependence of point-defect-mediated luminescence in silicon.” APPLIED PHYSICS LETTERS, 94, 25.
2009_recht_et_al_apl.pdf416 KB

Abstract:

We present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature.
Last updated on 05/23/2020