On the temperature dependence of point-defect-mediated luminescence in silicon
Publication information:
Daniel Recht, Federico Capasso, and Michael J. Aziz. 2009. “On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon”. APPLIED PHYSICS LETTERS, 94, 25. doi:10.1063/1.3157277
Abstract
We present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature.