Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers

We have grown 30-stage AtInAs-GaInAs quantum cascade laser structures by low-pressure metalorganic vaporphase epitaxy (MOVPE). The growth rate for the active region was set very low (0.1 nm/s), and growth stops were employed at all interfaces. The devices were operated pulsed at room temperature, with a threshold current density of 2.8 kA/cm(2), a lasing wavelength of 7.6mum, and a peak power of 150mW. CW operation was achieved up to a temperature of 180 K. These characteristics compare favorably with MBE-grown QC lasers of similar structure. (C) 2004 Elsevier B.V. All rights reserved.