High-power long-wavelength room-temperature MOVPE-grown quantum cascade lasers with air-semiconductor waveguide

Citation:

Q. J. Wang, C. Pflugl, L. Diehl, F. Capasso, S. Furuta, and H. Kan. 2008. “High-power long-wavelength room-temperature MOVPE-grown quantum cascade lasers with air-semiconductor waveguide.” ELECTRONICS LETTERS, 44, 8, Pp. 525-527.

Abstract:

Quantum cascade lasers grown by metal organic vapour phase epitaxy (MOVPE) with high peak output power of 1.3 W at 300 K emitting a wavelength of 9.8 mu m are reported. The devices are processed in wide ridge waveguide structures with an air-semiconductor interface to confine the laser optical mode. This design increases the optical overlap factor and reduces waveguide losses.