%0 Journal Article %J Nano Letters %D 2006 %T Broadband ZnO single-nanowire light-emitting diode %A Bao, Jiming %A Zimmler, Mariano A. %A Federico Capasso %A Wang, Xiaowei %A Ren, Z. F. %X We present a novel technique for reliable electrical injection into single semiconductor nanowires for light-emitting diodes and lasers. The method makes use of a high-resolution negative electron-beam resist and direct electron-beam patterning for the precise fabrication of a metallic top contact along the length of the nanowire, while a planar substrate is used as a bottom contact. It can be applied to any nanowire structure with an arbitrary cross section. We demonstrate this technique by constructing the first zinc oxide single-nanowire light-emitting diode. The device exhibits broad sub-bandgap emission at room temperature. %B Nano Letters %I AMER CHEMICAL SOC %C 1155 16TH ST, NW, WASHINGTON, DC 20036 USA %V 6 %P 1719-1722 %8 AUG 9 %G eng %N 8 %9 Article %R 10.1021/nl061080t