@article {doi:10.1021/acs.nanolett.9b04873,
	title = {Hot-carrier extraction in nanowire-nanoantenna photovoltaic devices},
	journal = {Nano Letters},
	volume = {20},
	number = {6},
	year = {2020},
	note = {PMID: 32347731},
	pages = {4064{\textendash}4072},
	abstract = {Nanowires bring new possibilities to the field of hot-carrier photovoltaics by providing flexibility in combining materials for band engineering and using nanophotonic effects to control light absorption. Previously, an open-circuit voltage beyond the Shockley-Queisser limit was demonstrated in hot-carrier devices based on InAs-InP-InAs nanowire heterostructures. However, in these first experiments, the location of light absorption, and therefore the precise mechanism of hot-carrier extraction, was uncontrolled. In this letter, we combine plasmonic nanoantennas with InAs-InP-InAs nanowire devices to enhance light absorption within a subwavelength region near an InP energy barrier that serves as an energy filter. From photon energy- and irradiance-dependent photocurrent and photovoltage measurements, we find that photocurrent generation is dominated by internal photoemission of non-thermalized hot electrons when the photoexcited electron energy is above the barrier, and by photo-thermionic emission when the energy is below the barrier. We estimate that an internal quantum efficiency up to 0.5{\textendash}1.2\% is achieved. Insights from this study provide guidelines to improve internal quantum efficiencies based on nanowire heterostructures.},
	doi = {10.1021/acs.nanolett.9b04873},
	url = {https://doi.org/10.1021/acs.nanolett.9b04873},
	author = {Chen, I-Ju and Limpert, Steven and Metaferia, Wondwosen and Thelander, Claes and Samuelson, Lars and Federico Capasso and Burke, Adam M. and Linke, Heiner}
}
