@article { ISI:000225890300084,
	title = {Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers},
	journal = {JOURNAL OF CRYSTAL GROWTH},
	volume = {272},
	number = {1-4},
	year = {2004},
	note = {12th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 12), Lahina, HI, MAY 30-JUN 04, 2004},
	month = {DEC 10},
	pages = {526-530},
	publisher = {ELSEVIER SCIENCE BV},
	type = {Article; Proceedings Paper},
	address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS},
	abstract = {We have grown 30-stage AtInAs-GaInAs quantum cascade laser structures by low-pressure metalorganic vaporphase epitaxy (MOVPE). The growth rate for the active region was set very low (0.1 nm/s), and growth stops were employed at all interfaces. The devices were operated pulsed at room temperature, with a threshold current density of 2.8 kA/cm(2), a lasing wavelength of 7.6mum, and a peak power of 150mW. CW operation was achieved up to a temperature of 180 K. These characteristics compare favorably with MBE-grown QC lasers of similar structure. (C) 2004 Elsevier B.V. All rights reserved.},
	keywords = {heterojunction semiconductor devices, Laser diodes, Metalorganic vapor phase epitaxy, Quantum wells, Semiconducting III-V materials},
	issn = {0022-0248},
	doi = {10.1016/j.jcrysgro.2004.08.048},
	author = {Bour, D and Troccoli, M and F. Capasso and Corzine, S and Tandon, A and Mars, D and Hofler, G}
}
