@article { ISI:000234968600002,
	title = {Pulsed- and continuous-mode operation at high temperature of strained quantum-cascade lasers grown by metalorganic vapor phase epitaxy},
	journal = {Applied Physics Letters},
	volume = {88},
	number = {4},
	year = {2006},
	month = {JAN 23},
	publisher = {AMER INST PHYSICS},
	type = {Article},
	address = {CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA},
	abstract = {We present the pulsed operation at room temperature of different strained InGaAs/AlInAs quantum-cascade lasers grown by low-pressure metalorganic vapor-phase epitaxy. Devices based on a bound-to-continuum transition design have threshold current densities in pulsed mode as low as 1.84 kA/cm(2) at 300 K. Identical lasers grown at higher rate (0.5 nm/s) also have threshold current densities lower than 2 kA/cm(2) at 300 K. Buried heterostructure lasers based on a double phonon resonance design were operated in continuous mode up to 280 K. Overall, the performance obtained from strained quantum cascade lasers deposited by metalorganic vapor-phase epitaxy are comparable with that of similar structures grown by molecular beam epitaxy. (c) 2006 American Institute of Physics.},
	issn = {0003-6951},
	doi = {10.1063/1.2166206},
	author = {Diehl, L and Bour, D and Corzine, S and Zhu, J. and Hofler, G and Lee, BG and Wang,C.Y. and Troccoli, M and F. Capasso}
}
