@article { ISI:000239623900025,
	title = {Broadband ZnO single-nanowire light-emitting diode},
	journal = {Nano Letters},
	volume = {6},
	number = {8},
	year = {2006},
	month = {AUG 9},
	pages = {1719-1722},
	publisher = {AMER CHEMICAL SOC},
	type = {Article},
	address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
	abstract = {We present a novel technique for reliable electrical injection into single semiconductor nanowires for light-emitting diodes and lasers. The method makes use of a high-resolution negative electron-beam resist and direct electron-beam patterning for the precise fabrication of a metallic top contact along the length of the nanowire, while a planar substrate is used as a bottom contact. It can be applied to any nanowire structure with an arbitrary cross section. We demonstrate this technique by constructing the first zinc oxide single-nanowire light-emitting diode. The device exhibits broad sub-bandgap emission at room temperature.},
	issn = {1530-6984},
	doi = {10.1021/nl061080t},
	author = {Bao, Jiming and Zimmler, Mariano A. and Federico Capasso and Wang, Xiaowei and Ren, Z. F.}
}
