@article { ISI:000246590700005,
	title = {Electroluminescence from single nanowires by tunnel injection: an experimental study},
	journal = {NANOTECHNOLOGY},
	volume = {18},
	number = {23},
	year = {2007},
	month = {JUN 13},
	publisher = {IOP PUBLISHING LTD},
	type = {Article},
	address = {DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND},
	abstract = {We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate ( under forward bias) and from the metal ( under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.},
	issn = {0957-4484},
	doi = {10.1088/0957-4484/18/23/235205},
	url = {http://dx.doi.org/10.1088/0957-4484/18/23/235205},
	author = {Zimmler, Mariano A. and Bao, Jiming and Shalish, Ilan and Yi, Wei and Yoon, Joonah and Narayanamurti, Venkatesh and Federico Capasso}
}
