@article { ISI:000255414900015,
	title = {High-power long-wavelength room-temperature MOVPE-grown quantum cascade lasers with air-semiconductor waveguide},
	journal = {ELECTRONICS LETTERS},
	volume = {44},
	number = {8},
	year = {2008},
	month = {APR 10},
	pages = {525-527},
	publisher = {INST ENGINEERING TECHNOLOGY-IET},
	type = {Article},
	address = {MICHAEL FARADAY HOUSE SIX HILLS WAY STEVENAGE, HERTFORD SG1 2AY, ENGLAND},
	abstract = {Quantum cascade lasers grown by metal organic vapour phase epitaxy (MOVPE) with high peak output power of 1.3 W at 300 K emitting a wavelength of 9.8 mu m are reported. The devices are processed in wide ridge waveguide structures with an air-semiconductor interface to confine the laser optical mode. This design increases the optical overlap factor and reduces waveguide losses.},
	issn = {0013-5194},
	doi = {10.1049/el:20080543},
	author = {Wang, Q. J. and Pflugl, C. and Diehl, L. and F. Capasso and Furuta, S. and Kan, H.}
}
