@article { ISI:000256742000024,
	title = {Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass},
	journal = {NANO LETTERS},
	volume = {8},
	number = {6},
	year = {2008},
	month = {JUN},
	pages = {1695-1699},
	publisher = {AMER CHEMICAL SOC},
	type = {Article},
	address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
	abstract = {We present a method which can be used for the mass-fabrication of nanowire photonic and electronic devices based on spin-on glass technology and on the photolithographic definition of independent electrical contacts to the top and the bottom of a nanowire. This method allows for the fabrication of nanowire devices in a reliable, fast, and low cost way, and it can be applied to nanowires with arbitrary cross section and doping type (p and n). We demonstrate this technique by fabricating single-nanowire p-Si(substrate)-n-ZnO(nanowire) heterojunction diodes, which show good rectification properties and, furthermore, which function as ultraviolet light-emitting diodes.},
	issn = {1530-6984},
	doi = {10.1021/nl080627w},
	author = {Zimmler, Mariano A. and Stichtenoth, Daniel and Ronning, Carsten and Yi, Wei and Narayanamurti, Venkatesh and Voss, Tobias and Federico Capasso}
}
