@article { ISI:000267431700013,
	title = {On the temperature dependence of point-defect-mediated luminescence in silicon},
	journal = {APPLIED PHYSICS LETTERS},
	volume = {94},
	number = {25},
	year = {2009},
	month = {JUN 22},
	publisher = {AMER INST PHYSICS},
	type = {Article},
	address = {1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA},
	abstract = {We present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature.},
	keywords = {electroluminescence, elemental semiconductors, excitons, photoluminescence, point defects, Silicon},
	issn = {0003-6951},
	doi = {10.1063/1.3157277},
	author = {Daniel Recht and Federico Capasso and Michael J. Aziz}
}
