@article { ISI:000282443800011,
	title = {GaAs/Al0.15Ga0.85As terahertz quantum cascade lasers with double-phonon resonant depopulation operating up to 172 K},
	journal = {APPLIED PHYSICS LETTERS},
	volume = {97},
	number = {13},
	year = {2010},
	month = {SEP 27},
	publisher = {AMER INST PHYSICS},
	type = {Article},
	address = {CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA},
	abstract = {We report the design and performance of GaAs/Al0.15Ga0.85As terahertz quantum cascade lasers with double-phonon resonant depopulation and a vertical lasing transition. Devices were processed into gold-clad double-metal waveguides. Lasing at 3 THz was observed up to a heat-sink temperature of 172 K, which compares favorably with the performance of single-phonon resonant depopulation devices based on vertical lasing transitions. These results demonstrate that terahertz quantum cascade lasers based on double-phonon depopulation designs may be a viable alternative to single-phonon depopulation designs for achieving high-temperature operation. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3496035]},
	issn = {0003-6951},
	doi = {10.1063/1.3496035},
	author = {Adams, Robert W. and Vijayraghavan, Karun and Wang, Qijie and Fan, Jonathan and Federico Capasso and Khanna, Suraj P. and Davies, A. Giles and Linfield, Edmund H. and Belkin, Mikhail A.}
}
