@article { ISI:000287558600016,
	title = {Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition},
	journal = {Journal of Crystal Growth},
	volume = {316},
	number = {1},
	year = {2011},
	month = {FEB 1},
	pages = {75-80},
	publisher = {ELSEVIER SCIENCE BV},
	type = {Article},
	address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS},
	abstract = {We investigate the growth conditions for lattice-matched InGaAs/InAlAs/InP quantum cascade lasers (QCLs) by metalorganic chemical vapor deposition (MOCVD). Effect of substrate misorientation, growth temperature, and V/III ratios of InGaAs and InAlAs layers on the surface morphology, optical quality, and impurity incorporation were systematically studied. It was found that epitaxial layers and multiquantum-well structures grown at 720 degrees C with V/Ill ratios of 116 for InGaAs and 21 for InAlAs on InP substrates with an off-cut angle of similar to 0.06 degrees exhibit a stable step-flow growth and low oxygen and carbon contamination. Using these conditions, a similar to 11.3-mu m-thick QCL with an emission wavelength at similar to 9.2 mu m was grown and fabricated, which demonstrated excellent structural quality and operated at room temperature in pulsed mode with a threshold current density of 2.0 kA/cm(2) and a slope efficiency of 550 mW/A. (C) 2010 Elsevier B.V. All rights reserved.},
	keywords = {Characterization, Infrared devices, Laser diodes, Metalorganic chemical vapor deposition, Semiconducting III-V materials},
	issn = {0022-0248},
	doi = {10.1016/j.jcrysgro.2010.12.028},
	url = {https://www.sciencedirect.com/science/article/pii/S0022024810011899?via\%3Dihub},
	author = {Huang, Yong and Ryou, Jae-Hyun and Dupuis, Russell D. and Pfluegl, Christian and Federico Capasso and Sun, Kewei and Fischer, Alec M. and Ponce, Fernando A.}
}
