@article { ISI:000370215200029,
	title = {Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs1-xPx Nanowires},
	journal = {NANO LETTERS},
	volume = {16},
	number = {2},
	year = {2016},
	month = {FEB},
	pages = {1017-1021},
	publisher = {AMER CHEMICAL SOC},
	type = {Article},
	address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
	abstract = {III-V semiconductor heterostructures are important components of many solid-state optoelectronic devices, but the ability to control and tune the electrical and optical properties of these structures in conventional device geometries is fundamentally limited by the bulk dimensionality and the inability to accommodate lattice-mismatched material combinations. Here we demonstrate how semiconductor nanowires may enable the creation of arbitrarily shaped one-dimensional potential structures for new types of designed device functionality. We describe the controlled growth of stepwise compositionally graded InAs1-xPx heterostmctures defined along the axes of InAs nanowires, and we show that nanowires with sawtooth-shaped composition profiles behave as near-ideal unipolar diodes with ratchet-like rectification of the electron transport through the nanowires, in excellent agreement with simulations. This new type of designed quasi-1D potential structure represents a significant advance in band gap engineering and may enable fundamental studies of low-dimensional hot-carrier dynamics, in addition to constituting a platform for implementing novel electronic and optoelectronic device concepts.},
	keywords = {band gap engineering, chemical beam epitaxy, heterostructure, InAs, InP, Semiconductor nanowire},
	issn = {1530-6984},
	doi = {10.1021/acs.nanolett.5b04067},
	author = {Nylund, Gustav and Storm, Kristian and Lehmann, Sebastian and Federico Capasso and Samuelson, Lars}
}
