Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane Sapphire

Citation:

I. Shalish, G. Seryogin, W. Yi, J. M. Bao, M. A. Zimmler, E. Likovich, D.C. Bell, F. Capasso, and V. Narayanamurti. 2009. “Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane Sapphire.” NANOSCALE RESEARCH LETTERS, 4, 6, Pp. 532-537.

Abstract:

We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H-InN single crystals growing in the [0001] orientation. The InN rods are uniform, showing very little variation in both diameter and length. Surprisingly, the rods show clear epitaxial relations with the c-plane sapphire substrate, despite about 29% of lattice mismatch. Comparing catalyst-free with Ni-catalyzed growth, the only difference observed is in the density of nucleation sites, suggesting that Ni does not work like the typical vapor-liquid-solid catalyst, but rather functions as a nucleation promoter by catalyzing the decomposition of ammonia. No conclusive photoluminescence was observed from single nanorods, while integrating over a large area showed weak wide emissions centered at 0.78 and at 1.9 eV.
Last updated on 05/23/2020