Electroluminescence from single nanowires by tunnel injection: an experimental study

Citation:

Mariano A. Zimmler, Jiming Bao, Ilan Shalish, Wei Yi, Joonah Yoon, Venkatesh Narayanamurti, and Federico Capasso. 2007. “Electroluminescence from single nanowires by tunnel injection: an experimental study.” NANOTECHNOLOGY, 18, 23. Publisher's Version

Abstract:

We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate ( under forward bias) and from the metal ( under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.
Last updated on 05/23/2020